Researchers at the South Korea Institute of Basic Science have made a significant breakthrough in semiconductor technology and nanomaterials that could lead to the development of much smaller, stronger and more efficient electronic devices. This research team developed a process to create sub-nanometer transistors that can overcome the limitations of the traditional lithography process.

According to the TechSpot report and the article published in Nature, with the researchers’ new technique, “one-dimensional” metal nanomaterials with a width of 0.4 nm can be used as gate electrodes or gate electrodes on two-dimensional substrates. This new technique promises to overcome the limitations of traditional lithography.

A new method for creating sub-nanometer transistors

Integrated devices based on 2D semiconductors exhibit excellent electrical properties even when their thickness is reduced to the atomic level. This makes them promising options for creating ultra-thin, high-performance electronic devices. A separate study also showed that these two-dimensional logic circuits can be used for the post-Moore’s law era.